Nanometer CMOS

Providing a comprehensive overview of all the important issues concerning modern Si MOSFETs, this examination covers the principles of MOSFET operation, theory, and scaling issues, as well as offering an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

About the Author
Dr. Frank Schwierz is head of the RF & Nanoelectronics Research Group at Technische Universität (TU) Ilmenau, Germany.

ISBN : 9789814241083, Author : Schwierz, Publisher : Pan Stanford - 2010, Dimensions : , Paperback : 300 pages